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1

Ab initio study of substitutional impurity atoms in 4H-SiC

Miyata, Masanori, Higashiguchi, Yoshitsune, Hayafuji, Yoshinori

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 365 KB

english, 2008

2

Formation Energy Calculations of Impurity Elements at Substitutional or Interstitial Sites in Silicon

Hatanaka, Hiroyuki, Hayafuji, Yoshinori

Journal:

Advanced Materials Research

Year:

2013

Language:

english

File:

PDF, 368 KB

english, 2013

3

Comparative First-Principles Study of ATiO 3 Perovskite Oxides (A=Ba, Sr, and Pb)

Kawanishi, Hironori, Ishizumi, Keisuke, Takahashi, Isao, Terauchi, Hikaru, Hayafuji, Yoshinori

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 135 KB

english, 2007

4

A Formation Mechanism of X Level due to an Indium-Carbon Dimer in Silicon

Kawanishi, Hiroyuki, Hayafuji, Yoshinori

Journal:

Advanced Materials Research

Year:

2012

Language:

english

File:

PDF, 474 KB

english, 2012

5

Light emission due to the quantum confinement of carriers in silicon-based nanostructures

Yoshinori Hayafuji, Kengo Ohmori, Kazushi Igei, Nobuo Kambara

Journal:

International Journal of Quantum Chemistry

Year:

2009

Language:

english

File:

PDF, 220 KB

english, 2009

6

Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal-oxide-semiconductor device characteristics and experimental results

Imanaga, Syunji, Hane, Kunio, Hayafuji, Yoshinori

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 1.13 MB

english, 1993

7

Electronic Structures of X Level due to Indium-Carbon Dimers in Silicon

Kawanishi, Hiroyuki, Hayafuji, Yoshinori

Journal:

Applied Mechanics and Materials

Year:

2012

Language:

english

File:

PDF, 328 KB

english, 2012

8

Stable Structures of Donor-Acceptor-Donor Trimer Codopants in 4H-SiC

Nishio, Naoyuki, Miyata, Masanori, Hayafuji, Yoshinori

Journal:

Advanced Materials Research

Year:

2013

Language:

english

File:

PDF, 385 KB

english, 2013

9

The Electronic Structure of One-Dimensional (1-D), 2-D, and 3-D Silicon Clusters

Kimura, Hitoshi, Imanaga, Syunji, Hayafuji, Yoshinori, Adachi, Hirohiko

Journal:

Journal of the Physical Society of Japan

Year:

1993

File:

PDF, 659 KB

1993

10

ChemInform Abstract: KRISTALLSTRUKTUR VON METHYLBROMID, METHYLJODID, METHYLENBROMID, METHYLENJODID UND METHYLENCHLORID

KAWAGUCHI, TAKEMI, HIJKIGAWA, MASAYA, HAYAFUJI, YOSHINORI, IKEDA, MASASHI, FUKUSHIMA, REIZO, TOMIIE, YUJIRO, WAKABAYASHI, AKIRA, MATSUMOTO, MITSUHIRO, TAKEUCHI, TORU, WATANABE, TOKUNOSUKE, TANAKA, KAZ

Journal:

Chemischer Informationsdienst

Year:

1973

File:

PDF, 99 KB

1973

11

Stacking fault annihilation dependence on surface orientation in silicon

Hayafuji, Yoshinori

Journal:

Journal of Applied Physics

Year:

1982

Language:

english

File:

PDF, 533 KB

english, 1982

12

Formation Energy Calculations of Impurity Elements at Substitutional or Interstitial Sites in Silicon

Hatanaka, Hiroyuki, Hayafuji, Yoshinori

Journal:

Applied Mechanics and Materials

Year:

2012

Language:

english

File:

PDF, 365 KB

english, 2012

13

The origin of n-type conductivity in undoped In[sub 2]O[sub 3]

Tomita, Takumi, Yamashita, Kazuyoshi, Hayafuji, Yoshinori, Adachi, Hirohiko

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 250 KB

english, 2005

14

[IEEE 2012 Fourth International Conference on Computational and Information Sciences (ICCIS) - Chongqing, China (2012.08.17-2012.08.19)] 2012 Fourth International Conference on Computational and Information Sciences - Electronic Structures of One-dimensional Si Clusters with B and P as Codopants

Ohama, Yasuhiko, Esashi, Noboru, Hayafuji, Yoshinori

Year:

2012

Language:

english

File:

PDF, 275 KB

english, 2012

15

Magnetic interaction between Co layers and Pd layers in Co/Pd multilayers

Miura, Kaoru, Kimura, Hitoshi, Imanaga, Syunji, Hayafuji, Yoshinori

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 684 KB

english, 1992

16

Theoretical Study of Acceptor–Donor Complexes in 4H-SiC

Miyata, Masanori, Hayafuji, Yoshinori

Journal:

Applied Physics Express

Year:

2008

Language:

english

File:

PDF, 93 KB

english, 2008

17

A mechanism for hole generation by octahedral B[sub 6] clusters in silicon

Ohmori, Kengo, Esashi, Noboru, Takao, Masakazu, Sato, Daisuke, Hayafuji, Yoshinori

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 360 KB

english, 2005

18

Critical thickness for ferroelectricity of BaTiO[sub 3] by first-principles calculations

Nakao, Ryo, Ishizumi, Keisuke, Takahashi, Isao, Terauchi, Hikaru, Hayafuji, Yoshinori, Miura, Kaoru

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 338 KB

english, 2005

19

Dependence of Critical Thickness on Particle-Size for Ferroelectricity in BaTiO 3 by Ab Initio Calculations

Ishizumi, Keisuke, Kawanishi, Hironori, Nakao, Ryo, Takahashi, Isao, Terauchi, Hikaru, Hayafuji, Yoshinori, Miura, Kaoru

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 310 KB

english, 2006

20

Theoretical Study of the Stability of X@B 6 and X@B 12 Clusters: X=H–Br in Crystalline Silicon

Higashiguchi, Yoshitsune, Ochiai, Hiroaki, Igei, Kazuyuki, Ohmori, Kengo, Hayafuji, Yoshinori

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 403 KB

english, 2007

21

Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky Barriers

Kawado, Seiji, Hayafuji, Yoshinori, Adachi, Tohru

Journal:

Japanese Journal of Applied Physics

Year:

1975

File:

PDF, 730 KB

1975

22

Monte Carlo modeling of electron transport in a Si metal-oxide-semiconductor inversion layer including quantum state and bulk scattering

Imanaga, Syunji, Hayafuji, Yoshinori

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 1.17 MB

english, 1991

23

Electronic Structures of Donor-Acceptor-Donor Trimer Codopants in Silicon

Kambara, Nobuo, Hayafuji, Yoshinori

Journal:

Advanced Materials Research

Year:

2011

Language:

english

File:

PDF, 359 KB

english, 2011

24

Applied Mathematics and Algorithms for Cloud Computing and IoT

Mao, Yuxin, Bhuse, Vijay, Zhou, Zhongmei, Pichappan, Pit, Abdel-Aty, Mahmoud, Hayafuji, Yoshinori

Journal:

Mathematical Problems in Engineering

Year:

2014

Language:

english

File:

PDF, 71 KB

english, 2014

25

The Crystal Structures of Methyl Bromide and Methyl Iodide

Kawaguchi, Takemi, Hijikigawa, Masaya, Hayafuji, Yoshinori, Ikeda, Masashi, Fukushima, Reizo, Tomiie, Yujiro

Journal:

Bulletin of the Chemical Society of Japan

Year:

1973

File:

PDF, 762 KB

1973

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